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在用辉光放电方法制备α-Si∶H薄膜材料时,氧是一个主要沾污杂质,因此研究氧对α-Si∶H材料特性的影响是很有意义的。本文主要通过红外吸收光谱、光学带隙E_g~(opt)和Urbach吸收边的斜率W值的测量,来研究掺氧非晶硅薄膜的光吸收特性。非晶硅膜在电容耦合辉光放电反应器中生长,衬底为高阻C-Si衬底(用于红外吸收光谱测量)和7059玻璃衬底(用于反射率和透射率测量);反应气体为5%SiH_4+Ar,掺氧时
Oxygen is a major contaminant impurity in the preparation of a-Si: H thin films by glow discharge. Therefore, it is of great significance to study the effect of oxygen on the properties of a-Si: H materials. In this paper, the optical absorption properties of amorphous silicon films doped with oxygen were investigated by measuring infrared absorption spectra, optical bandgap E_g opt (opt) and slope of the Urbach absorption edge. The amorphous silicon film was grown in a capacitively coupled glow discharge reactor, the substrate was a high resistance C-Si substrate (for infrared absorption spectroscopy) and 7059 glass substrate (for reflectance and transmittance measurements); the reaction Gas is 5% SiH_4 + Ar, oxygen-doped