日本日立中央研究所用肖特基势垒工艺制成GaAs双栅场效应晶体管。在4千兆赫下,功率增益达12分贝,噪声系数3分贝。改变第二栅偏压,增益变化在30分贝,对输入阻抗无严重影响。双栅器件的第二个栅是在第一个栅和漏之间。第一个肖特基栅长1.2微米,第二个长2.5微米。据称,双栅结构器件的稳定性和最大稳定增益比单栅结构高得多,因而便于设计放 Hitachi Central Institute of Japan Schottky barrier technology made of GaAs dual gate field effect transistor. At 4 GHz, the power gain reaches 12 dB with a noise figure of 3 dB. Change the second gate bias voltage, the gain changes at 30 dB, no serious impact on the input impedance. The second gate of the double-gate device is between the first gate and the drain. The first Schottky gate is 1.2 microns long and the second 2.5 microns long. Allegedly, the stability and maximum stability of the dual-gate structure of the device is much higher than the single-gate structure, which is easy to design