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研究了808 nm量子阱脊型波导结构掺铝半导体激光器在空气中解理不同镀膜方法对激光损伤阈值的影响。将半导体激光器管芯分别采用前后腔面不镀膜、前后腔面镀反射膜和前后腔面先镀钝化薄膜,再镀腔面反射膜的方法进行对比。测试半导体激光器输出功率的结果表明:腔面镀钝化薄膜的方法比只镀腔面反射膜的方法的激光损伤阈值高36%,并且能有效防止灾变性光学镜面损伤,同时,还分析了半导体激光器管芯和光学薄膜之间发生的物理效应。在大功率半导体激光器芯片腔面上镀钝化薄膜是提高其激光损伤阈值的一个行之有效的方法。
The effect of 808 nm quantum well ridges waveguide structure aluminum-doped semiconductor laser on the damage threshold of laser in cleavage of different coating methods in air was studied. The semiconductor laser die were used before and after the cavity surface uncoated film, front and back cavity surface coated with antireflection coating and front and back surface of the first passivation film, and then coated surface reflection film comparison. The results of testing the output power of the semiconductor laser show that the method of depositing the passivation film on the cavity surface is 36% higher than that of the method of plating the surface reflection film only, and can effectively prevent the catastrophic optical mirror damage. Meanwhile, Physical Effects Between Laser Die and Optical Film. Passivation thin film on the surface of high power semiconductor laser chip is an effective way to improve the laser damage threshold.