Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency drive
The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. but the FWHM broadens
Blue luminescence at about 431 nm is obtained from epitaxial silicon after C+ implantation,annealing in hydrogen ambience and chemical etching sequentially. Whe