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实验研究了常用载体Ga_2O_3,Na_2CO_3在石墨、氧化锆、八氧化三铀、氧化钍、氧化铍及五氧化二钽等六种基体中的作用规律。实验结果指出,在上述六种基体中,载体对谱线强度的影响(logI/I_0)与该元素的电离电位(V)之间有一定的比例关系。根据实验测到的电弧温度和电离度的数据,分析了载体影响的各种因素;最后我们认为,在分馏法的条件下,需要考虑电场的影响,这时,载体的作用主要是通过弧柱中的温度和电离度的变化,使光谱的激发条件更为有利,这类载体对杂质的蒸发过程影响不大。
The effects of common carriers Ga_2O_3 and Na_2CO_3 on six kinds of matrix, graphite, zirconia, U3O8, thorium oxide, beryllium oxide and tantalum pentoxide were studied experimentally. The experimental results show that there is a certain proportional relationship between the influence of the carrier on the line intensity (logI / I_0) and the ionization potential (V) of the above six kinds of substrates. Based on the data of the measured arc temperature and the degree of ionization, we analyzed various factors that influence the carrier. Finally, we think that under the condition of fractionation, the influence of the electric field needs to be considered. At this moment, the carrier mainly passes through the arc column In the temperature and ionization changes, so that the excitation spectrum conditions more favorable, such carriers on the evaporation of impurities has little effect.