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2008年度完成了在Si-PIN探测器表面制备6LiF薄膜的工艺,对表面制备了6LiF薄膜与未制备6LiF薄膜SiPIN探测器面对面粘接在一起的SiPIN-6LiF-SiPIN中子探测器进行了漏电流测量,测量
In 2008, the process of preparing 6LiF thin film on the surface of Si-PIN detector was completed. The leakage current was applied to the SiPIN-6LiF-SiPIN neutron detector with 6LiF film and 6LiF thin film SiPIN detector. Measurement, measurement