一、概述为了密切配合离子注入器件应用研究,在工艺尽可能简单、最好不用热扩工艺的思想指导下,我们选择了全离子注入C_4D结构。它是繁多的电荷耦合器件(简称CCD)结构中的一种,具有结构简单、工艺流程短、充分利用离子注入新技术等优点。国外P沟C_4D是采用注磷形成注入势垒来实现非对称表面势。在我们只能注硼的现实条件 First, an overview In order to closely cooperate with the application of ion implantation devices, as simple as possible in the process, the best thermal expansion technology under the guidance of the idea, we chose the whole ion implantation C_4D structure. It is a variety of charge-coupled device (referred to as CCD) structure in a, with a simple structure, short process, take full advantage of the advantages of ion implantation technology. Foreign P groove C_4D is the use of phosphorus to form an injection barrier to achieve asymmetric surface potential. In the real conditions we can only note boron