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本文详细地介绍了包括实验装置、测量程序和数据分析在内的扩展电阻技术.基于这种技术制成了自动两探针扩展电阻测试设备,在离子注入硅片表面得到的测量重复性介于1～3%,在单晶样品上电阻率的测量误差不大于15%.借助扩展电阻技术得到的掺杂分布能与C—V法结合阳极氧化剥层技术得到的分布相一致.基于单层突变结理论,使用计算机计算了修正因子.最后,详细阐述了扩展电阻技术的应用.
This article describes in detail the extended resistance technique including the experimental setup, the measurement procedure and the data analysis. Based on this technique, an automatic two-probe extended resistance test apparatus is manufactured. The measurement repeatability obtained on the surface of the ion implanted silicon wafer is between 1 ~ 3%, the measurement error of the resistivity on the single crystal sample is not more than 15% .The doping distribution obtained by the extended resistance technique can be consistent with the distribution obtained by the C-V method combined with the anodization peeling technique.Based on the single layer Abrupt junction theory, using the computer to calculate the correction factor.Finally, expounded the application of the extended resistance technology.