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用先磁控溅射多层金属膜预置层后硫化的方法成功制备出CZGe_xT_(1-x)S薄膜,并主要研究了Ge含量对于该薄膜光电学性能的影响。分别采用X射线衍射仪、X射线能量色散谱仪、拉曼光谱仪、扫描电子显微镜,紫外-可见-近红外分光光度计和霍尔效应测量仪对不同Ge含量的CZGe_xT_(1-x)S薄膜的物相结构、元素比例、表面形貌、光学带隙以及电学性能进行了表征与分析。结果表明随着Ge含量的升高,晶粒尺寸不断长大,光学带隙从1.52上升至2.12 e V。同时,Ge替换Sn可减少薄膜内的缺陷,所制备的CZGe S薄膜的载流子浓度与迁移率分别为1.99×1018cm-3与9.712 cm2/Vs。
The CZGe_xT_ (1-x) S thin film was successfully prepared by magnetron sputtering and then vulcanized. The effect of Ge content on the photoelectric properties of the thin film was investigated. X-ray diffraction, X-ray energy dispersive spectroscopy, Raman spectroscopy, scanning electron microscopy, ultraviolet-visible-near infrared spectroscopy and Hall effect measuring instrument were used to measure the CZGe_xT_ (1-x) S films with different Ge contents Phase structure, element ratio, surface morphology, optical band gap and electrical properties were characterized and analyzed. The results show that as the Ge content increases, the grain size grows and the optical band gap increases from 1.52 to 2.12 eV. Meanwhile, the substitution of Sn by Ge can reduce the defects in the films. The carrier concentration and mobility of the prepared CZGe S films are 1.99 × 10 18 cm -3 and 9.712 cm 2 / Vs, respectively.