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采用高压温度梯度冷凝法,由元素锢和红磷直接合成纯度磷化铟多晶。每次合成1小时,可得多晶300克。典型纯度磷化铟多晶的电学性质为: n_77K=3.79～15×10~15/cm~3 μ_77K=1·94～2.94×10~4cm~2/V·s 硅和硫是合成中引起沾污的主要杂质。化学分析表明:所得多晶组份接近化学配比,能满足用LEC法拉制各种掺杂或不掺杂磷化铟单晶的要求。
Using high-pressure temperature gradient condensation method, the purity of indium phosphide polycrystal is directly synthesized from elemental impurities and red phosphorus. Each synthesis of 1 hour, can be polycrystalline 300 grams. The typical purity of indium phosphide polycrystalline electrical properties: n_77K = 3.79 ~ 15 × 10 ~ 15 / cm ~ 3 μ_77K = 1.94 ~ 2.94 × 10 ~ 4cm ~ 2 / V · s silicon and sulfur are caused by the dip The main impurity impurities. The chemical analysis shows that the obtained polycrystalline components are close to the stoichiometric ratio and can meet the requirements of drawing various doped or undoped indium phosphide single crystals by LEC.