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本文介绍一种生长卤化物单晶的方法——注入式反应气氛下降法(称IRABP法).采用该法已获得φ75×75的优质 KCl单晶。用10.6μmCO_2激光量热卡计测量单晶的体吸收系数β_(10.6■1～2×10~(-4)cm~(-1)。讨论各种工艺参数对晶体质量的影响。
In this paper, a method of growing single crystals of halide - drop-injection reaction atmosphere (called IRABP method) is introduced.It has obtained φ75 × 75 high quality KCl single crystals by this method. The bulk absorption coefficient β_ (10.6 ~ 1 ~ 2 × 10 ~ (-4) cm ~ (-1)) of the single crystal was measured with a 10.6μm CO_2 laser calorimeter. The effects of various process parameters on the crystal quality were discussed.