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设计了一套适用于二种工艺（离子注入隔离工艺和半绝缘衬底自隔离工艺）的背栅效应测试版图，用选择离子注入形成有源层和欧姆接触区，在非掺杂的半绝缘ＧａＡｓ 衬底上制备ＧａＡｓ ＭＥＳＦＥＴｓ 器件．研究了这二种不同工艺制备的ＭＥＳＦＥＴｓ 器件的背栅效应以及不同距离背栅电极的背栅效应大小．结果表明，采用离子注入隔离工艺制备的ＭＥＳＦＥＴｓ 器件的背栅效应要比采用半绝缘衬底自隔离工艺制备ＭＥＳＦＥＴｓ器件的背栅效应小，背栅效应的大小与距离近似成反比，采用隔离注入的背栅阈值电压随距离变化的趋势比采用衬底自隔离的更大．
A set of back-gate effect test patterns suitable for both processes (ion implantation isolation process and semi-insulating substrate self-isolation process) is designed. Selective ion implantation is used to form the active layer and the ohmic contact region. In the undoped semi-insulation GaAs MESFETs on GaAs Substrates. The back gate effect of the MESFETs fabricated by these two different processes and the back gate effect of the back gate electrodes at different distances were investigated. The results show that the back gate effect of MESFETs fabricated by ion implantation isolation process is smaller than the back gate effect of MESFETs fabricated by semi-insulating substrate self-isolation process, and the size of back gate effect is approximately inversely proportional to the distance. The tendency of the back gate threshold voltage to change with distance is greater than with substrate self-isolation.