Dear editor,rnNon-volatile static random access memory (nvSRAM) with a 6-transistor 2-ferroelectric capacitor (6T2C) structure has been proposed, which meets requirements such as high operating speed and non-volatile memory of the spacecraft and has a wide application prospect in the aerospace field [1, 2].The single event effects (SEEs) in integrated circuits result from the impact of energetic particles on sensitive areas,which may cause the instantaneous interruption of circuit operation, change in logic state, or even permanent damage to semiconductor integrated circuits [3, 4].However, the influence of SEEs on nvSRAM based on the ferroelectric capacitor (FeCap) still remains unknown.