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In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer(SEM/EDS) method and x-ray photoelectron spectroscopy(XPS) method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10~8,drain induced barrier lowering(DIBL) was as low as 5 raV/V,and subthreshold swing(SS) of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency(/max) of the enhancement-mode HEMT was larger than that of the conventional one.
In this paper, the enhancement-mode AlGaN / GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated. Scanning electron microscope / energy dispersive spectrometer (SEM / EDS) method and x-ray photoelectron spectroscopy XPS) method were used to confirm the formation of oxides. Based on the experimental results, the resulting enhancement-mode HEMT exhibited a threshold voltage of 0.5 V, a high peak transconductance of 210 mS / mm, and a maximum drain current of 610 mA / mm at the gate bias of 4 V. Meanwhile, the on / off current ratio of enhancement-mode HEMT was as high as 10 ~ 8, drain induced barrier lowering (DIBL) was as low as 5 raV / V, and subthreshold swing (SS) of 80 mV / decade was obtained. Compared to the conventional HEMT, the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower, and the off-state breakdown voltage of which was higher. In addition, a power gain cutoff frequency (/ max) of the enhancement-mode HEMT was larger than that of the conventional one.