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采用物理气相输运(PVT)法生长了直径为50 mm的K掺杂Cd S晶体,对掺杂和未掺杂的Cd S晶片进行显微观察、二次离子质谱(SIMS)成分分析、红外光谱透过率以及霍尔效应测试,研究了K元素掺杂对Cd S晶体光学及电学性能的影响。生长时用KCl进行掺杂。显微观察显示,掺杂KCl后Cd S晶体的微观形貌没有明显变化;SIMS成分测试表明,晶体中引入的杂质主要是K元素,而Cl元素未掺入晶体中。红外光谱透过率发现掺杂K元素的Cd S晶体相比于未掺杂晶体,不仅在波长为2.5~10μm内红外透过率显著下降,而且在波长为10μm以上时红外透过率甚至低于15%。另外,K元素掺杂Cd S晶体电学性能也发生变化,晶体迁移率也由未掺杂的318 cm2/(V·s)下降为146 cm2/(V·s)。
K doped CdS crystals with a diameter of 50 mm were grown by physical vapor transport (PVT) method. The doped and undoped CdS wafers were observed by microscopy, SIMS (fractional ion mass spectrometry), infrared Spectral transmittance and Hall effect test, the effect of K doping on the optical and electrical properties of CdS crystal was studied. Growth with KCl for doping. The microscopic observation showed that there was no obvious change in the morphology of CdS crystals after doping KCl. The SIMS test showed that the impurities introduced into the crystals are mainly K, while the Cl elements are not doped into the crystals. The IR spectral transmittance of Cd doped K-doped CdS crystals was significantly lower than that of undoped crystals, not only in the wavelength range of 2.5 ~ 10μm, but also lower in the infrared transmittance at wavelengths of 10μm At 15%. In addition, the electrical properties of K doped CdS crystals also changed, and the crystal mobility decreased from 318 cm2 / (V · s) to 146 cm2 / (V · s).