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用超声喷雾热解淀积技术制备了ＳｎＯ２Ｆ透明导电薄膜，其电阻率达４×１０－４Ωｃｍ，可见光透过率达９１％。研究了衬底温度、Ｆ／Ｓｎ比例对ＳｎＯ２Ｆ薄膜光电特性的影响。ＸＲＤ分析及ＳＥＭ观察表明，ＳｎＯ２Ｆ薄膜为多晶结构，平均粒径约５０ｎｍ。对超声雾化及淀积原理进行了分析，由于溶液的超声雾化微粒均匀性好，载气流量与溶液雾化微粒线度无关，使得超声雾化热解淀积工艺控制相对容易，热解反应类型大多为化学气相淀积，所制备薄膜的均匀性和重复性良好。
The SnO2F transparent conductive film was prepared by ultrasonic spray pyrolysis deposition technology. The resistivity of the film was 4 × 10-4Ωcm and the visible light transmittance was 91%. The effects of substrate temperature and F / Sn ratio on the photoelectric properties of SnO2F thin films were investigated. XRD analysis and SEM observation show that the SnO2F film has a polycrystalline structure with an average particle size of about 50 nm. The principle of ultrasonic atomization and deposition is analyzed. Because of the good uniformity of ultrasonic atomization solution and the carrier gas flow, the control of the ultrasonic atomization pyrolysis deposition process is relatively easy. The pyrolysis Most of the reaction types are chemical vapor deposition, and the prepared films have good uniformity and repeatability.