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采用Skysilicon 0.35μm标准CMOS工艺设计并制造了一种可嵌入射频识别(RFID)标签的低功耗单栅非易失性存储器(SPNVM)。与传统的采用双栅工艺制造的电可擦除可编程只读存储器(EEPROM)和快闪存储器相比较,所提出的单栅存储器具有更低的制造成本和功耗,更多的可编程次数以及更简单的控制电路。该存储器是将三个MOS晶体管的栅极连在一起作为等效浮栅,数据以电压的形式输出。利用Fowler-Nordheim电子隧穿机制对浮栅注入或泄放电子,这使得编程过程可以自动停止,且浮栅不会被过度编程。所提出的存储器结构仅使用两个正电压便可实现擦除、写入和读取操作。测试结果表明,对存储单元进行擦除和数据写入所需时间均为80 ms,存储器可以实现超过1 000次的编程循环,在芯片未封装的情况下,数据保持时间至少为14天。
A low-power, single-gate, non-volatile memory (SPNVM) that can be embedded with radio frequency identification (RFID) tags is designed and fabricated using the Skysilicon 0.35μm standard CMOS process. Compared to the conventional electrically erasable programmable read-only memory (EEPROM) and flash memory manufactured by the double-gate process, the proposed single-gate memory has lower manufacturing cost and power consumption, more programmable times As well as simpler control circuit. The memory is the gate of the three MOS transistors together as the equivalent floating gate, the data output in the form of voltage. The Fowler-Nordheim electron tunneling mechanism is used to inject or discharge electrons into the floating gate. This allows the programming process to stop automatically and the floating gate can not be over-programmed. The proposed memory structure uses only two positive voltages for erase, write, and read operations. The test results show that the time required to erase and write data to a memory cell is 80 ms, and the memory can be programmed more than 1,000 times. The data retention time is at least 14 days when the chip is not packaged.