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以无水乙醇为溶剂,氨水为催化剂,利用正硅酸乙酯(TEOS)水解,并在500℃下煅烧1h,制备了SiO2粉体.将SiO2粉体作为内核浸渍到以硝酸亚铈、乙酰丙酮和正丙醇为原料制备的铈溶胶中,得到包覆型CeO2@SiO2复合粉体.利用XRD、SEM、TEM和FT-IR等测试手段,对所制备样品的物相结构、形貌、粒径大小、团聚情况进行表征.将所制备的包覆型CeO2@SiO2复合粉体配制成抛光浆料用于砷化镓晶片的化学机械抛光,用原子力显微镜(AFM)观察抛光表面的微观形貌,测量表面粗糙度.结果表明,采用浸渍工艺成功制备出单分散球形,粒径在400～450nm,负载均匀的包覆型CeO2@SiO2复合粉体.复合粉体中CeO2的包覆量随着铈溶胶中铈离子浓度的升高而增大.经包覆型CeO2@SiO2复合磨料抛光后的砷化镓晶片表面的微观起伏更趋于平缓,在1μm×1μm范围内表面粗糙度Ra值为0.819nm,获得了具有亚纳米量级粗糙度的抛光表面.
The SiO2 powder was prepared by using anhydrous ethanol as solvent and aqueous ammonia as catalyst, hydrolyzing by TEOS and calcining at 500 ℃ for 1 h, impregnating SiO2 powder with cerium nitrate, acetylacetonate Acetone and n-propanol as raw materials to obtain coated CeO2 @ SiO2 composite powders.The phase structure, morphology, and particle size of the prepared samples were characterized by XRD, SEM, TEM and FT-IR. Size and agglomeration of the surface of the gallium arsenide wafer were characterized.The chemical structure of the coated CeO2 @ SiO2 composite powder was prepared into a polishing slurry for the chemical mechanical polishing of gallium arsenide wafer, and the microscopic morphology of the polished surface was observed with an atomic force microscope (AFM) , The surface roughness was measured.The results showed that the coated CeO2 @ SiO2 composite powders with single-dispersion spherical shape and uniform particle diameter of 400 ~ 450nm were successfully prepared by impregnation process.The coating amount of CeO2 in the composite powders was The concentration of cerium ion in cerium sol increases with the increase of cerium ion concentration.The surface roughness of the gallium arsenide wafer polished by the coated CeO2 @ SiO2 composite abrasive tends to be gentle, and the surface roughness Ra in the range of 1 μm × 1 μm is 0.819 nm, a polishing table with sub-nano-scale roughness was obtained surface.