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CdS—CdSe烧结膜具有显著的光敏特性。氧气在这种多晶薄膜上的吸附提高了薄膜中晶粒间的界现势垒,并改变了晶粒中的载流子浓度.表现在薄膜的电导率和电子迁移率随着氧气的吸附而下降.这种薄膜在空气中,50℃下经过30min的退火处理,晶粒间的界面势垒可提高约14meV,薄膜在氮气中的退火处理使界面势垒有所下降。
CdS-CdSe sintered film has significant photosensitive properties. Adsorption of oxygen on this polycrystalline thin film increases the barrier that exists between the grains in the film and changes the carrier concentration in the grain, which manifests itself in the conductivity and the electron mobility of the film as oxygen is adsorbed Drop.The film in the air at 50 ℃ after 30min annealing treatment, grain boundary barrier can be increased by about 14meV, thin film annealed in nitrogen to make the interface barrier decreased.