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本文介绍了功率ＢＭＦＥＴ的结构和性能。并对介于标准垂直ＪＦＥＴ和功率ＢＪＴ之间的新型ＢＭＦＥＴ的实际单元结构的导通和关闭状态特性进行了讨论。同时还讨论了表面栅区的高斯掺杂分布对阻断电压的影响。在相同尺寸和掺杂的条件下，将这一新型ＢＭＦＥＴ器件与标准功率双极晶体管进行了对比分析。分析结果表明，新型ＢＭＦＥＴ在穿通和大电流增益时具有较高的额定电流，极低的饱和电压，而且不受电流拥挤现象的影响。
This article describes the structure and performance of power BMFETs. And discusses the on and off characteristics of the actual cell structure of a new type of BMFET between a standard vertical JFET and a power BJT. The effect of the Gaussian doping profile of the surface gate region on the blocking voltage is also discussed. In the same size and doping conditions, this new type of BMFET devices and standard power bipolar transistors were compared. The analysis results show that the new BMFET has high current rating and extremely low saturation voltage at punch-through and high current gain, and is not affected by current crowding.