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设计了一款D频段基于商用平面肖特基二极管DBES105a以及石英基片的二倍频器.通过对传统的用于平衡式混频器及倍频器的鳍线/悬置微带线巴伦耦合器进行改进,提出了一种方便为肖特基二极管外加偏置的平衡式倍频结构.首先,提出了一种适用于石英基片的波导/鳍线过渡结构,并且通过仿真及实验对该结构进行了验证,测试结果表明,这种过渡结构的损耗只有0.15 dB.在驱动功率为26.3 mW、外加反偏电压为0.4 V时,倍频器的测试最大输出功率为3.39 mW,对应倍频效率为12.9%.在外加偏置电压偏离最佳偏置点时,倍频器的输出功率从3.1mW降低到2.0 mW.这也说明:为了达到最大倍频输出功率,也需要为肖特基变阻二极管倍频器提供外加直流偏置.
A D-band commercial DBF-based Schottky diode DBES105a and a double frequency doubler based on quartz substrate were designed.By analyzing the traditional fin / suspend microstrip B-band for balanced mixer and doubler The coupler is improved and a balanced frequency multiplying structure which is conveniently applied by Schottky diode is proposed.At first, a waveguide / fin transition structure suitable for quartz substrate is proposed, and by simulation and experiment The test results show that the loss of this transition structure is only 0.15 dB.When the driving power is 26.3 mW and the reverse bias voltage is 0.4 V, the maximum output power of the frequency multiplier is 3.39 mW, corresponding to The frequency efficiency is 12.9%. When the bias voltage deviates from the optimum bias point, the output power of the frequency multiplier is reduced from 3.1mW to 2.0mW. This also shows that in order to achieve the maximum output frequency, Base variable resistance diode multiplier provides an additional DC bias.