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ZnSe是一种理想的蓝紫色发光材料，用于制作发光器件有较大的应用前景，采用单源喷发、离化原子团束（ICB）技术在GaAs（100）上外延ZnSe单晶薄膜，并用电子能谱分析了外延薄膜的成分。用X射线衍射和RHEED研究了外延ZnSe单晶薄膜结构和外延质量。研究了淀积能量和衬底温度对薄膜质量的影响。得到了摆动曲线半高宽为133rad·s，并具有原子水平平整程度的ZnSe（100）单晶薄膜。外延薄膜存在0．2～0．4μm的应变过渡层，过渡层随淀积能量的增大而变薄。
ZnSe is an ideal blue-violet luminescent material, which has great potential for fabrication of light-emitting devices. Single-source eruptions and ionized atomic cluster (ICB) techniques were used to epitaxy ZnSe single crystal thin films on GaAs (100) The composition of the epitaxial thin film was analyzed by energy spectrum. The structure and epitaxial mass of epitaxial ZnSe single crystal films were investigated by X-ray diffraction and RHEED. The effects of deposition energy and substrate temperature on film quality were studied. The ZnSe (100) single crystal thin film with a FWHM of 133 rad · s and a flat atomic level was obtained. The epitaxial thin film has a strain transition layer of 0.2-0.4 μm, and the transition layer becomes thinner as the deposition energy increases.