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退火处理后的 CsI:Pb晶体在 10～ 30K温度范围内观察到两类发光 :当激发波长为 410nm, 主要发光带在 464nm附近 ;而当激发波长为 360nm或 300nm,主发射带为 422nm。这两种发光带 的相对强度与退火时间的长短密切相关。讨论了 CsI:Pb晶体中不同的 Pb2＋基聚集相的形成机制 和发光机理。
Two types of luminescence were observed in the annealed CsI: Pb crystal at the temperature range of 10 ~ 30K: when the excitation wavelength was 410nm, the main luminescence band was around 464nm; while when the excitation wavelength was 360nm or 300nm, the main emission band was 422nm. The relative intensities of these two bands are closely related to the length of annealing time. The formation mechanism and luminescence mechanism of different Pb2 + -based agglomerates in CsI: Pb crystals are discussed.