论文部分内容阅读
Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.09Sb0.91and InAs0.09Sb0.91thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs0.09Sb0.91detectors is obviously extended to 11.5 μm, and that of InAs0.09Sb0.95detectors is 8.3 μm. At room temperature, the peak detectivity of Dλp* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×109cm·Hz1/2·W-1 for InAs0.09Sb0.91photoconductors, the detectivity D* at wavelength of 9 μm is 7.56×108cm·Hz1/2·W-1, and that at 11 μm is 3.92×108cm·Hz1/2·W-1. The detectivity of InAs0.09Sb0.91detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of InAs0.09Sb0.95detectors, which rises from the increase of arsenic (As) composition in InAs0.09Sb0.91materials.