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提出一种改进的自旋转移矩器件的制备工艺:在电子束曝光形成纳米级图形之后,依次采用离子束刻蚀、带胶绝缘层淀积再正胶剥离的图形转移方法,成功制备了纳米柱状赝自旋阀结构磁性多层膜CoFe/Cu/CoFe/Ta,器件的横向尺寸为140nm×70nm。对该结构进行了电磁学性质的测试:在变化范围为-500～+500Oe(1A/m=4π×10-3 Oe)的外加磁场下,观测到巨磁阻效应;在零外加磁场下,施加垂直于膜平面的电流时,观测到电流诱导的磁化翻转效应,其临界电流密度为108 A/cm2量级。该方法具有工艺步骤少、易于实现的特点,在自旋转移矩器件等纳米级器件的制备中具有广泛的应用前景。
An improved spin-transfer torque device fabrication process is proposed: after the electron beam exposure forms a nanoscale pattern, ion beam etching, pattern transfer with adhesive layer deposition followed by positive gel delamination are sequentially used to successfully prepare a nano Columnar Spin-Spin Valve Structure The magnetic multilayer film CoFe / Cu / CoFe / Ta has a lateral dimension of 140nm × 70nm. The structure was tested electromagnetically. Giant magnetoresistive effect was observed under the applied magnetic field in the range of -500 ~ +500 Oe (1A / m = 4π × 10-3 Oe). Under zero applied magnetic field, When a current perpendicular to the plane of the film was applied, a current-induced magnetization flip effect was observed with a critical current density on the order of 108 A / cm2. The method has the advantages of less process steps and easy implementation, and has broad application prospects in the preparation of nano-scale devices such as spin-transfer torque devices.