This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly. This paper studies the drain current collapse of AlGaN / GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbAlO MIS-HEMT, smaller current collapse is found, especially when the gate static voltage is 8 V. Thhrough a thorough study of the gate-drain conductance dispersion, it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface. Beforefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAlO gate dielectric can not only decrease the gate leakage current but also passivate the AlGaN surface effectively, and weaken the current collapse effect accordingly.