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采用磁控溅射技术在Si基片上生长了Ag掺杂的ZnO薄膜,XRD测试表明所得薄膜结晶性质良好,未出现Ag的分相。未掺杂和Ag掺杂氧化锌薄膜的低温(10K)光致发光(PL)谱显示:Ag的掺入使得中性施主束缚激子发射(D0X)显著减弱,并且在3.315eV处观测到了与Ag有关的施主-受主对(DAP)发射,受主缺陷的形成归因于掺入的Ag替位Zn。计算得到受主能级离价带顶约110meV。霍尔效应测得电阻率约0.1Ω.cm,迁移率约36cm2/V.s,空穴浓度约1.7×1018cm-3。在此基础上制备了ZnO∶Ag/ZnO的同质结,I-V测试显示了明显的整流特性,且反向漏电流很小。所有结果表明Ag掺杂的氧化锌薄膜已经转化为p型。
Ag-doped ZnO thin films were grown on Si substrate by magnetron sputtering. The XRD results showed that the crystallinity of the films was good and the phase separation of Ag did not occur. The low temperature (10K) photoluminescence (PL) spectra of undoped and Ag-doped ZnO films show that the incorporation of Ag weakens the neutral donor-bound exciton emission (D0X) significantly and at 3.315eV, Ag-related donor-acceptor pair (DAP) emission due to the incorporation of Ag substitution Zn. The calculated acceptor level off-price top of about 110meV. Hall effect measured resistivity of about 0.1Ω.cm, the mobility of about 36cm2 / V.s, the hole concentration of about 1.7 × 1018cm-3. On this basis, ZnO: Ag / ZnO homojunction was prepared. The I-V test showed obvious rectification characteristics with small reverse leakage current. All the results show that the Ag-doped zinc oxide film has been converted to p-type.