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采用离子束溅射技术和热氧化工艺,对预先制备的ZnO纳米线表面进行纳米CuO修饰,研究了不同溅射工艺条件下对形成的CuO/ZnO纳米线异质结构的影响,通过控制溅射参数成功地合成出不同CuO量子点尺寸和分布密度的CuO/ZnO量子点异质结和CuO为壳层的CuO/ZnO同轴纳米线异质结构.将X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)用于研究样品的结构和形貌.实验结果表明,溅射在ZnO纳米线表面的Cu膜的厚度对形成的CuO/ZnO异质结构起着重要的作用.在Cu膜适度较薄时,获得了直径仅5 nm、分布较均匀的高密度(2.05×1010mm-2)CuO/ZnO量子点异质结;而Cu膜较厚时,形成的是CuO/ZnO同轴纳米线异质结构.利用高分辨透射电子显微镜(HRTEM)进一步对量子点异质结和同轴纳米线异质结的界面晶体结构进行了研究.
The CuO / ZnO nanowire heterostructures formed under different sputtering conditions were studied by ion beam sputtering and thermal oxidation process. The surface of ZnO nanowires prepared in advance was modified by controlling the sputtering The CuO / ZnO quantum dot heterojunction with different CuO quantum dot sizes and distribution densities and the CuO / ZnO coaxial nanowire heterostructure with CuO shell were successfully synthesized by X-ray diffraction (XRD), scanning electron Microstructures and morphologies of the samples were investigated by SEM and TEM.The experimental results show that the thickness of the Cu film sputtered on the ZnO nanowires plays an important role in the formation of CuO / ZnO heterostructures CuO / ZnO quantum dot heterojunction with high density (2.05 × 1010mm-2) with a diameter of only 5 nm and a uniform distribution was obtained when the Cu film was moderately thin.When the Cu film was thick, CuO / ZnO Coaxial Nanowire Heterostructure The interfacial crystal structure of the quantum dot heterojunction and the coaxial nanowire heterojunction was further investigated by HRTEM.