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为解决常用经验计算公式参数复杂、产热项考虑不足等问题,采用优化的激光器热模型分析了激光器连续工作时有源区温度的变化并进行了实验验证。通过分析有源区注入载流子产热机制,建立了替代传统的热源计算公式的经验计算公式,考虑了载流子通过激光器内部渐变异质结时的势垒电阻以提高焦耳热计算精度。制作了电极尺寸为10μm、台面尺寸为20μm的半导体激光器件并对器件热特性进行了模拟。由于未考虑热载流子注入效应,利用传统经验公式得出的有源区热功率密度比提出的优化模型偏低,因而理论模拟的器件内部温升也偏低。对激光器出光特性进行测试,推导出不同注入电流下激光器内部有源区的温升。测量与理论分析对比表明,采用经验公式得出的结果比实际测试结果偏低,而优化的热模型解决了该问题,利用该方法得出的有源区温升与测试结果最大偏差仅为0.2K,且温升随注入电流的变化趋势一致。
In order to solve the common empirical formula of complex parameters and lack of consideration of heat generation, the optimized laser model was used to analyze the variation of temperature in the active region during the continuous laser operation and the experimental verification was carried out. By analyzing the heat generation mechanism of carrier injection in the active region, an empirical formula to replace the traditional heat source calculation formula is established, and the calculation of Joule heating accuracy is taken into account when the carrier passes through the barrier resistance of the gradual heterogeneous junction in the laser. A semiconductor laser device having an electrode size of 10 μm and a mesa size of 20 μm was manufactured and the thermal characteristics of the device were simulated. Since hot carrier injection effect is not considered, the thermal power density of the active region obtained by the traditional empirical formula is lower than the proposed optimization model. Therefore, the theoretical temperature rise inside the device is also low. The characteristics of the laser were tested, and the temperature rise of the active region in the laser under different injection current was deduced. The comparison between measurement and theoretical analysis shows that the results obtained by the empirical formula are lower than the actual test results, and the optimized thermal model solves the problem. The maximum deviation between the temperature rise and the test result obtained by the method is only 0.2 K, and the temperature rise with the injection of the current trend of change.