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现已着手把 GaInAs/AlInAs 量子阱应用到光纤通信上.MBE 生长的与 InP 晶格匹配的 GaInAs/AlInAs 量子阱发射波长能够从1.65μm 移动到1.0μm 左右,这一范围复盖了光纤在1.3μm 的最小色散和在1.55μm 的最小衰减区.用这种材料生长的量子阱激光器发射近于1.55μm,阈值电流密度是2.4KA/cm~2.GaInAs/AlInAs 量子阱4K 下的光致发
The GaInAs / AlInAs quantum wells have now been put to optical fiber communication and the emission wavelength of the GaInAs / AlInAs quantum wells grown by MBE that are lattice-matched to InP can be moved from 1.65μm to 1.0μm, which covers the optical fiber at 1.3 μm and a minimum attenuation region at 1.55 μm Quantum well lasers grown with this material emit near 1.55 μm and the threshold current density is 2.4 kA / cm 2. Photoluminescence of a GaN InAs / AlInAs quantum well