论文部分内容阅读
报道了等离子体源离子注入 (PSII)或等离子体浸没离子注入 (PIII)及增强沉积工业机的实验结果及应用。该机真空室直径 90 0mm ,高 10 5 0mm ,立式放置 ,抽气系统由分子泵及机械泵构成并且实现了PLC控制 ,本底真空小于 4× 10 - 4Pa。等离子体由热阴极放电或三个高效磁过滤式金属等离子体源产生 ,因此可实现全方位离子注入或增强沉积成膜。该机的负高压脉冲最高幅值为 80kV ,最大脉冲电流为 6 0A ,重复频率为 5 0— 5 0 0Hz ,脉冲上升沿小于 2 μs,并且可根据需要产生脉冲串。其等离子体密度约为 10 8— 10 10 ·cm- 3,膜沉积速率为 0 .1— 0 .5nm/s。
The experimental results and applications of plasma source ion implantation (PSII) or plasma immersion ion implantation (PIII) and enhanced deposition industrial machines are reported. The machine vacuum chamber diameter 90 0mm, height 105mm, vertical, exhaust system consists of molecular pump and mechanical pump and the realization of the PLC control, background vacuum less than 4 × 10 - 4Pa. Plasma is generated by hot cathode discharge or by three high efficiency magnetic-filtered metal plasma sources, enabling full range ion implantation or enhanced deposition filming. The maximum amplitude of the negative high-voltage pulse of this machine is 80kV, the maximum pulse current is 60A, the repetition frequency is 500-500Hz, the rising edge of pulse is less than 2μs, and the pulse train can be generated as required. Its plasma density is about 10 8 -10 10 cm -3, and its film deposition rate is 0.1-0.5 nm / s.