Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambi-ent. X-ray diffraction (XRD), Auger electron spectroscopy (AES) sputter profiling, MCs+-mode secondary ion mass spectrometry (MCs+-SIMS) and atomic force microscopy (AFM) were employed, respectively, for the structural, com-positional and morphological characterization of the obtained films. For temperatures below 875 K, titanium films could not be fully oxidized within one hour. Above that temperature, the completely oxidized films were found to be rutile in structure. Detailed studies on the oxidation process at 925 K were carried out for the understanding of the underlying mechanism of titanium dioxide (TiO2) formation by thermal oxidation. It was demonstrated that the formation of crystalline TiO2 could be divided into a short oxidation stage, followed by crystal forming stage. Relevance of this recognition was further discussed.