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本文首次报道了在硅衬底上用反应蒸发法沉积AlN薄膜的技术．实验发现在衬底温度为470～850℃的范围内均可得到单晶薄膜，X射线衍射分析表明，薄膜只在2θ=58．9°处出现一个衍射峰，其生长晶面为（1120），是AlN的解理面．在较高的生长温度下，生长速率较低，得到的AlN薄膜具有更窄的衍射半峰宽（0．5°）、Al和N更趋向于化学计量比结合．从扫描电镜测试看出，薄膜表面平整光滑、无裂纹，说明用反应蒸发法外延生长的薄膜表面状况优良．最后，NH3对Si表面的原位清洗也作了一些讨论．
This paper reports for the first time the deposition of AlN films by reactive evaporation on silicon substrates. The experimental results show that the single crystal film can be obtained in the temperature range of 470 ~ 850 ℃. The X-ray diffraction analysis shows that the film has a diffraction peak only at 2θ = 58.9 °, and the growth crystal plane is (1120) , Is the cleavage plane of AlN. At higher growth temperatures, the growth rate is lower and the resulting AlN film has a narrower diffraction peak width (0.5 °), with Al and N more likely to be stoichiometric. Scanning electron microscopy showed that the surface of the film was smooth and crack-free, which showed that the surface of the film epitaxially grown by reactive evaporation method was excellent. Finally, NH3 on the Si surface in-situ cleaning also made some discussion.