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研究了Si基GaN上的欧姆接触。对在不同的合金化条件下铝 (Al)和钛铝铂金(Ti Al Pt Au)接触在不同的合金化条件下的性质作了详尽的分析。Al GaN在 45 0℃氮气气氛退火 3min取得最好的欧姆接触率 7.5× 1 0 3Ω·cm2 ,而Ti Al Pt Au GaN接触在 6 5 0℃氮气气氛退火 2 0s取得最好的欧姆接触 8.4× 1 0 5Ω·cm2 ,而且Ti Al Pt Au GaN接触有较好的热稳定性。
The ohmic contact on Si-based GaN has been investigated. The properties of the contact between aluminum (Al) and TiAl Pt Au under different alloying conditions under different alloying conditions were analyzed in detail. Al GaN was annealed at 45 ℃ for 3min in nitrogen atmosphere to obtain the best ohmic contact rate of 7.5 × 10 3 Ω · cm 2 while the TiAl Pt Au GaN contact was annealed at 650 ℃ for 20 s in a nitrogen atmosphere to obtain the best ohmic contact of 8.4 × 1 0 5 Ω · cm 2, and Ti Al Pt Au GaN contacts have better thermal stability.