日本富士通公司于今年(1993年)1月在日本电子情报通讯学会召开的“半导体材料、器件研究会”上宣布开发成功第一块256兆位DRAM。 这种新开发的256兆位DRAM芯片采用准分子激光光源的光学片子步进机与电子束直写系统混合曝光技术制成,最小线宽0.2微米,芯片面积为400平方毫米(16.1×24.9mm),单元面积0.67平方微米,存取时间为40纳秒。 Japan’s Fujitsu Co., Ltd. announced the successful development of the first 256-megabit DRAM at the “Semiconductor Materials and Devices Research Society” held by the Japan Electronics and Telecommunications Information Society in January this year (1993). The newly developed 256-Mbit DRAM chip is manufactured using a hybrid exposure technology with an optical film stepper and an electron beam direct write system of an excimer laser source with a minimum linewidth of 0.2 μm and a chip area of ​​400 mm 2 (16.1 × 24.9 mm ), A cell area of ​​0.67 square microns and an access time of 40 nanoseconds.