在旋转园盘电极上测定的碲化镉电沉积极化曲线,转速与沉积电流的关系,以及X射线衍射分析和表面分析,确认在比纯镉析出电位正的区域可以沉积得碲化镉。提出了电沉积反应机理,计算了碲化镉由Te与Cd~(++)生成的标准电极电位,解释了极化曲线,并指出制备不同导电类型碲化镉之电位范围。 The polarization curves of cadmium telluride electrodeposition, the relationship between deposition speed and deposition current, and the X-ray diffraction analysis and surface analysis on the rotating disk electrode confirmed that cadmium telluride could be deposited in the area more positive than the pure cadmium deposition potential. The electrodeposition reaction mechanism was proposed, the standard electrode potential of cadmium telluride formed by Te and Cd ~ (++) was calculated, the polarization curve was explained, and the potential range of preparing cadmium telluride with different conductivity type was pointed out.