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用60Coγ射线对GaAlAs异质结红外发光二极管OP224和NPN型Si光电三极管OP604进行了电离辐照试验,分析了试验器件在60Coγ射线辐照下氧化物陷阱电荷和界面态陷阱电荷的积累效应。结果表明,随着辐照累积剂量的增加,OP224正向电流的最大值逐渐下降,红外光强度逐渐衰减;OP604的暗电流逐渐增大,光电流逐渐下降。
The ionizing radiation experiments of GaAlAs heterojunction infrared light emitting diode OP224 and NPN type Si phototransistor OP604 were carried out with 60Coγ ray, and the accumulation effect of oxide trap charge and interfacial state trap charge under 60Co γ-ray irradiation was analyzed. The results showed that with the increase of radiation dose, the maximum of OP224 forward current gradually decreased and the intensity of infrared light decreased gradually. The dark current of OP604 gradually increased and the photocurrent decreased gradually.