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本文对H_2加PH_3气氛中InP的迁移规律进行了探讨研究。结果表明,迁移区宽度随有源区厚度的减小、时间的增长及温度的升高而增大;随PH_3量的增大,迁移区宽度有从上升到饱和再下降的趋势。采用H_2加PH_3气氛中的迁移方法,制作了1.3μm InGaAsP/InP半导体激光器。在20℃,CW工作下,所得最低闽值电流为30mA。单面微分量子效率可达30％,直到2倍阈值,获得了稳定的单基横模工作,平行于p_n结面上远场分布的光束角θ_(11)=18°,到1.74倍闽值仍保持单纵模工作。
In this paper, the migration rule of InP in H_2 plus PH_3 atmosphere was studied. The results show that the width of the migration zone increases with the decrease of the thickness of the active zone, the increase of the temperature and the increase of the temperature. With the increase of the amount of PH 3, the width of the migration zone tends to rise from saturation to then decrease. A 1.3μm InGaAsP / InP semiconductor laser was fabricated by the migration method of H_2 plus PH_3 atmosphere. At 20 ° C, CW operation, the resulting minimum threshold current of 30mA. Single-sided differential quantum efficiency up to 30%, up to 2 times the threshold, to obtain a stable single-mode transverse mode work, parallel to the beam angle θ 11 (11) = 18 ° far field distribution p n junction to 1.74 times the threshold Still maintain a single longitudinal mode of work.