摘要:介绍了原位电化学方法在半导体表面制备纳米尺寸肖特基势垒的工艺,讨论了其制备原理和实验条件,描述了纳米尺度金属/半导体界面特性,并对这种方法制备的肖特基势垒与传统方法制备的肖特基势垒进行了比较,这种制备肖特基势垒的方法克服了传统制备方法的缺点,所形成的金属-半导体界面光滑无缺陷;生成的纳米尺度金属肖特基势垒可用于制备单电子晶体管、单电子存储器等纳米器件。 Abstract: The technology of in-situ electrochemical method for preparing nanosize Schottky barrier on semiconductor surface is introduced. The preparation principle and experimental conditions are discussed. The interface characteristics of nanoscale metal / semiconductor are described. Compared with the Schottky barrier prepared by the traditional method, the Schottky barrier prepared by the Schottky barrier overcomes the shortcomings of the traditional preparation method, and the formed metal-semiconductor interface is smooth and defect free. The generated nano Scaled metal Schottky barrier can be used to fabricate nanodevices such as single electron transistors and single electron memories.