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定量研究了GaInAsP条形激光器在室温和室温以上直流工作的制约条件。激光器脉冲阈值电流、其温度敏感性、电学串联电阻以及焊接器件的热阻是这方面的关键参数。得到了一组理论曲线,使用这组理论曲线可以从脉冲阈值确定待测的直流阈值。实验结果证实了这些表达式是正确的。对GaInAsP激光器而言,文献报道的T_0值较低(47～80K)。这意味着对通常的氧化物隔离或质子隔离条形结构,为了使其能在一个相当大的温度范围实现稳定的直流工作必须要降低电学串联电阻和热阻。我们对一系列的结构从理论上对这两个参数进行了计算。计算表明:热失控(Thermal runaway)对1～10Ω范围内的电阻是很敏感的,这就提出了有可能予以改进的一个方面。为此,探索了对三元InGaAsP型顶层用隧道肖特基接触来降低接触电阻的工艺条件。
Quantitative study of the GaInAsP strip laser at room temperature and above DC operating constraints. The laser pulse threshold current, its temperature sensitivity, the electrical series resistance, and the thermal resistance of the soldering device are the key parameters in this regard. A set of theoretical curves is obtained, from which the threshold value of the DC to be measured can be determined from the pulse threshold. The experimental results confirm that these expressions are correct. For GaInAsP lasers, the value of T_0 reported in the literature is low (47 ~ 80K). This means that for typical oxide or proton-isolated stripe structures, the electrical series resistance and thermal resistance must be reduced in order to achieve stable dc operation over a substantial temperature range. We calculated these two parameters theoretically for a series of structures. Calculations show that Thermal runaway is sensitive to resistance in the 1 to 10Ω range, suggesting an area that may improve. Therefore, the process conditions for reducing the contact resistance by tunneling Schottky contacts in ternary InGaAsP top layers have been explored.