一、工艺分析 1.铝—硅合金缺陷 金属化工艺是为了保证低阻值的欧姆接触和管芯对金属层的粘附,它是在温度为450～550℃之间来完成的。这一过程会引起铝进入硅的固相扩散或相反,结果产生富硅相和富铝相的接触,这种富硅富铝相的界面是不均匀的,经腐蚀就可观察到大小不一的金相坑。由于硅[100]晶向在低界面方向的择优性。用扫描电镜可清晰 First, the process analysis 1. Aluminum - silicon alloy defects Metallization process is to ensure low-ohmic contact resistance and die on the metal layer adhesion, which is at a temperature of 450 ~ 550 ℃ to complete. This process causes the aluminum to diffuse into the solid phase of silicon or vice versa, resulting in contact between the silicon-rich phase and the aluminum-rich phase. The interface of this silicon-rich aluminum-rich phase is non-uniform and can be observed in different sizes Metallurgical pit. Due to the preferred orientation of silicon [100] in the low interfacial direction. With scanning electron microscope can be clear