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本文用光荧光光谱和激发光谱研究了分子束外延GaAs-GaAlAs多量子阱结构的界面特性。在极弱激发条件下,与界面相关的光谱特性可以分为三类:当样品界面较为平整时,光谱结构上出现明显的本征发光和杂质发光竞争现象;当样品界面起伏较大时,界面缺陷可成为激子束缚中心,阻止载流子向杂质能级扩散,光谱中只表现出较宽的本征发光峰;还有一种情况是界面缺陷使杂质在界面富集,光谱中出现较强的界面杂质发光。
In this paper, the interfacial properties of GaAs-GaAlAs MQW structures by molecular beam epitaxy have been studied by fluorescence and excitation spectra. Under the condition of very weak excitation, the spectral characteristics related to the interface can be divided into three categories: when the sample interface is relatively flat, there are obvious eigen luminescence and impurity luminescence competition in the spectral structure; when the interface of the sample fluctuates greatly, the interface Defects can become the exciton binding center to prevent the carrier diffusion to the impurity level, the spectrum shows only a wide range of intrinsic luminescence peak; there is a case of interface defects so that impurities in the interface enrichment, the spectrum appears stronger Interface impurities glow.