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本文研究了硅中离子注入层的红外瞬态退火.对于注As~+和注B~+样品的测试表明,红外瞬态退火具有电激活率高、缺陷消除彻底和注入杂质再分布小等优点.对于注入剂量为1×10~(15)As~+cm~(-2)的样品和3.6×10~(14)B~+cm~(-2)的样品,经红外瞬态退火后电激活率分别达到了90%和95%.用红外瞬态退火样品制作的台面管的反向漏电流,在相同的测试条件下,只是常规热退火样品的一半左右.对于通过650(?)SiO_2膜,25keV、5×10~(14)cm~(-2)剂量的硼离子注入样品,经红外瞬态退火后得到了结深分0.20μm的浅结.
In this paper, the infrared transient annealing of the ion-implanted layer in silicon has been studied. The results show that the infrared transient annealing has the advantages of high electrical activation rate, complete defect elimination and small redistribution of implanted impurities For samples with a dose of 1 × 10 ~ (15) As ~ + cm -2 and samples of 3.6 × 10 ~ (14) B ~ + cm ~ (-2) The reverse leakage current of the mesa tube fabricated by infrared transient annealing sample was only about half that of the conventional thermal annealing sample under the same test condition. For the samples with 650? SiO 2 Film, 25 keV, 5 × 10 ~ (14) cm ~ (-2) dose of boron ions into the sample, the infrared transient annealing obtained a shallow junction 0.20μm shallow junctions.