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沉积在云母片上的纯Ｃ６０薄膜受２０ｋｅＶ的Ｌｉ＋和Ｎ＋２离子轰击，剂量在０．５×１０１６／ｃｍ２～５．０×１０１６／ｃｍ２之间改变，测量了离子注入后Ｃ６０薄膜方块电阻随温度的变化，进而推导出Ｃ６０薄膜电导率随温度和注入离子剂量的变化；分析了非原位测量中氧元素对电导率变化的影响以及能量较高的注入离子对Ｃ６０薄膜的辐照损伤效应。研究结果表明，Ｌｉ＋注入对Ｃ６０薄膜电导率的影响明显高于Ｎ＋２注入的影响，并给出了不同离子注入条件下Ｃ６０薄膜电导率随温度变化的函数关系式。
Pure C60 films deposited on mica were bombarded with 20keV Li + and N + 2 ions at a dose ranging from 0.5 × 1016 / cm2 to 5.0 × 1016 / cm2. The effects of C60 film sheet resistance And then the conductivity of C60 thin film was deduced with the change of temperature and dose of ion implantation. The effect of oxygen on the conductivity change and the irradiation damage of C60 film by ion implantation were analyzed. The results show that the influence of Li + implantation on the conductivity of C60 thin film is significantly higher than that of N + 2 implanted. The dependence of C60 thin film conductivity on temperature is given under different ion implantation conditions.