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为了拓展光电器件在存储领域的应用以及更深入地了解阻变机理,研究了Cu/TiOx/Al电阻式随机存储器(RRAM)的激活(forming)过程,其中TiOx为透明薄膜。利用磁控反应溅射方法,通过改变O2分压制备出具有高折射率(在可见光区域平均值约2.23)和低消光系数(在可见光区域平均值约0.004 2)的透明TiOx薄膜。通过构建Cu/TiOx/Al三明治结构验证了透明TiOx薄膜的阻变存储特性。在阻变过程中,通过调节forming电压和电流,实现了透明TiOx薄膜的阶段性forming。对不同forming阶段的I-V拟合,进一步探索透明TiOx薄膜forming过程的电子传输方式。结果表明,随着forming的发展,透明器件的传输机理发生明显改变,由肖特基发射(SE)转变为FN隧穿,直接隧穿,到最后的欧姆传输,最终实现完整的forming。揭示了TiOx薄膜应用于可见光波段光电存储器件的可行性。
In order to expand the application of optoelectronic devices in the storage field and understand the resistance change mechanism more deeply, the forming process of Cu / TiOx / Al resistive random access memory (RRAM) was studied, in which TiOx was a transparent thin film. A transparent TiOx film having a high refractive index (about 2.23 in the visible region) and a low extinction coefficient (about 0.004 2 in the visible region) was prepared by changing the partial pressure of O2 using a magnetron reactive sputtering method. The resistive storage characteristics of transparent TiOx films were verified by constructing Cu / TiOx / Al sandwich structure. In the resistance change process, by adjusting the forming voltage and current, the transparent TiOx thin film is formed. The I-V fitting of different forming stages was carried out to further explore the electronic transmission mode of the transparent TiOx film forming process. The results show that with the development of forming, the transmission mechanism of the transparent device changes obviously, from Schottky emission (SE) to FN tunneling, direct tunneling, to the final ohmic transmission, finally realizing the complete forming. The feasibility of applying TiOx thin films to visible light band optoelectronic memory devices is revealed.