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V501截止时,T501⑥～⑨绕组感应的反向电压通过正向导通的 VD504给电容 C514充电,然后经R514放电,将浪涌尖峰吸收后转换成焦耳热释放,保护 MOSFET(场效应)开关管。(2)开关管过流保护:电源控制器 N501②脚既是初级电流信息检测端,又是开关管过流检测保护端口。②脚的电压限制在5.0V,若 V2电压超出5V,则导通时间比较器翻转,触发导通时间双稳态电路关闭主控门 C3,切断(13)脚的方波输出。这样根据 V2=1.5V+L_PI_P/RC 可以演算出开关管 V501漏极最大限制电流 I_(DM)(V2=5.0代入算出的 I_P 即为 I_(OM))。此外,②脚电路还与(14)脚的电源电压比较器配合,对 MOSFET 开关
V501 deadline, T501 ⑥ ~ ⑨ Winding induced reverse voltage through the forward conduction of the VD504 Charging capacitor C514, and then discharged by the R514, the peak surge absorption into Joule heat release, MOSFET protection (field effect) switch. (2) switch over-current protection: power controller N501 ② pin is both the primary current information detection side, but also the switch overcurrent detection protection port. ② feet voltage limit at 5.0V, if the V2 voltage exceeds 5V, the turn-on time comparator flip, trigger on-time bistable circuit off the main control gate C3, cut off the square wave (13) pin output. According to V2 = 1.5V + L_PI_P / RC, the maximum drain current I_ (DM) of switch V501 can be calculated (I_ (OM)). In addition, ② foot circuit also with (14) feet of the power supply voltage comparator with the switch on the MOSFET