【摘 要】
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The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is foun
【机 构】
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State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Z
论文部分内容阅读
The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is found that the diffusion length distribution of minority carriers in the cells is uniform, and high efficiency of the solar cells(about 16%)is achieved.It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions.Moreover, it is indicated that during general solar cell fabrication, phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions, while aluminum gettering by RTP could not.Therefore, it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells, which will increase me-Si utilization effectively.
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