为克服大尺寸显示面板中反应时间的延迟问题,采用低阻栅线是十分有益的,同样在小尺寸面板上也存在这种相互匹配的过程。然而,由于Al较高的氧化速度,铝合金和ITO材料接触性能并不太好。文章介绍了在室温ITO沉积过程中,通过增加ACX(Al-C-Ni)中Ni含量来减少ACX-ITO接触电阻。经室温ITO沉积后,接触电阻成功地减少到300Ω,而且没有ACX引起的问题出现。 In order to overcome the problem of delay of reaction time in large-size display panel, it is very beneficial to use a low-resistance gate line, which is also the same in small-sized panels. However, due to the relatively high oxidation rate of Al, the contact properties between the aluminum alloy and the ITO material are not very good. The article describes the reduction of ACX-ITO contact resistance by increasing the Ni content in ACX (Al-C-Ni) during room temperature ITO deposition. After room temperature ITO deposition, the contact resistance was successfully reduced to 300Ω and no problems caused by ACX occurred.