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以CF4和CH4为源气体,用等离子体增强化学气相沉积(PECVD)方法制备了不同工艺条件下的氟化非晶碳(a-C∶F)薄膜。发现薄膜的沉积速率和射频功率几乎成正比关系,薄膜中氟的存在是导致薄膜具有紫外吸收特性的根本原因;用傅立叶变换红外光谱(FTIR)分析可知薄膜中有C-F基团的存在,使得薄膜的介电常数降低;合理控制沉积条件,可获得理想的电介质薄膜。
Fluorinated amorphous carbon (a-C: F) films were prepared by plasma enhanced chemical vapor deposition (PECVD) using CF4 and CH4 as source gases. It is found that the deposition rate of the film is almost in direct proportion to the RF power. The presence of fluorine in the film is the fundamental reason for the UV absorption of the film. FTIR analysis shows the presence of CF groups in the film, The dielectric constant decreases; reasonable control of deposition conditions, can obtain the ideal dielectric film.