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利用自行搭建的化学气相沉积(CVD)设备在Cu箔衬底上成功的制备出石墨烯薄膜,并利用光学显微镜和拉曼光谱分析等手段对石墨烯薄膜的形貌和结构进行了表征。主要研究了Cu箔的表面处理和沉积过程的气体流量对石墨烯质量的影响,发现氨水处理Cu箔可以腐蚀Cu箔表面的各种杂质提高Cu箔的洁净度从而提高石墨烯的结晶质量,优化CH4和H2的气体流量可以提高石墨烯的单层性和均匀性。并最终在CH4:H2=200:0 sccm条件下,在氨水处理过的Cu箔上获得了面积1.5 cm×1.5 cm的均匀的单层石墨烯。
The graphene thin films were successfully prepared on Cu foil substrate by using self-built chemical vapor deposition (CVD) equipment. The morphology and structure of the graphene thin films were characterized by optical microscopy and Raman spectroscopy. The effects of surface treatment of Cu foil and deposition process on the quality of graphene were investigated. It was found that Cu foil treated with ammonia water can corrode all kinds of impurities on the surface of Cu foil, improve the cleanliness of Cu foil and improve the crystal quality of graphene. The gas flow rates of CH4 and H2 can improve the monolayer and uniformity of graphene. Finally, a uniform monolayer graphene with an area of 1.5 cm × 1.5 cm was obtained on ammonia-treated Cu foil under CH4: H2 = 200: 0 sccm.